2N7002HS 数据手册 ( 数据表 ) - Nexperia B.V. All rights reserved
生产厂家

Nexperia B.V. All rights reserved
General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
FEATUREs and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• AEC-Q101 qualified
APPLICATIONs
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
60 V, dual N-channel Trench MOSFET
NXP Semiconductors.
60 V, dual N-channel Trench MOSFET
Nexperia B.V. All rights reserved
60 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved
60 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved
60 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved
60 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved
60 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved
60 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved
60 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved
60 V, N-channel Trench MOSFET
Nexperia B.V. All rights reserved