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2N6667 PDF
2N6667 数据手册 ( 数据表 ) - Shenzhen SPTECH Microelectronics Co., Ltd.
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Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• High DC Current Gain- : hFE = 1000(Min)@ IC= -5A
• Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A
• Complement to Type 2N6387
APPLICATIONS
• Designed for general purpose amplifier and low speed switching applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor