STM32F100V6H6BTR 查看數據表（PDF） - STMicroelectronics

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STM32F100V6H6BTR

Low & medium-density value line, advanced ARM®-based 32-bit MCU with 16 to 128 KB Flash, 12 timers, ADC, DAC & 8 comm interfaces

STMicroelectronics 

STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB

Electrical characteristics

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Symbol

Table 27. Flash memory characteristics

Parameter

Conditions

Min(1) Typ Max(1) Unit

tprog 16-bit programming time

TA = –40 to +105 °C

40 52.5 70

µs

tERASE Page (1 KB) erase time

TA = –40 to +105 °C

20

-

40 ms

tME

Mass erase time

TA = –40 to +105 °C

20

-

40 ms

Read mode

fHCLK = 24 MHz, VDD = 3.3 V

-

-

20 mA

IDD

Supply current

Write / Erase modes

fHCLK = 24 MHz, VDD = 3.3 V

-

-

5

mA

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

-

-

50 µA

Vprog Programming voltage

-

2

-

3.6

V

1. Guaranteed by design.

Table 28. Flash memory endurance and data retention

Symbol Parameter

Conditions

Value

Min(1) Typ Max

Unit

NEND Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

10

-

1 kcycle(2) at TA = 85 °C

30

-

tRET Data retention 1 kcycle(2) at TA = 105 °C

10

-

10 kcycles(2) at TA = 55 °C

20

-

1. Based on characterization not tested in production.

2. Cycling performed over the whole temperature range.

- kcycles

-

- Years

-

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