NAND04GA3C2N6E 查看數據表（PDF） - STMicroelectronics

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产品描述 (功能)

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NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

NAND04GA3C2A, NAND04GW3C2A

Figure 5. Read Operations

CL

E

W

AL

6 Device operations

R

RB

I/O

00h

Command

Code

tBLBH1

Address Input

30h

Command

Code Busy

1. Highest address depends on device density.

Data Output (sequentially)

Ai11016

19/51

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