NAND04GA3C2N6E 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

2 Memory array organization

Figure 4. Memory Array Organization

NAND04GA3C2A, NAND04GW3C2A

Block

Page

Block = 128 Pages

Page = 2112 Bytes (2,048 + 64)

Main Area

Spare Area

2048 Bytes

64

Bytes

Page Buffer, 2112 Bytes

2,048 Bytes By6t4es

8 bits

8 bits

AI12704

12/51

Share Link: