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ST7PMC2N6B6(2004) 查看數據表(PDF) - STMicroelectronics

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ST7PMC2N6B6 Datasheet PDF : 294 Pages
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ST7MC1/ST7MC2
11.8 I/O PORT PIN CHARACTERISTICS
11.8.1 General Characteristics
Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.
Symbol
Parameter
Conditions
VIL
VIH
Vhys
VIL
VIH
Vhys
Input low level voltage 1)
Input high level voltage 1)
CMOS ports
Schmitt trigger voltage hysteresis 2)
Input low level voltage 1)
Input high level voltage 1)
G & H ports
Schmitt trigger voltage hysteresis 2)
IINJ(PIN)3)
Injected Current on an I/Os exept
PD7
IINJ(PIN)3) Injected Current on PD7
ΣIINJ(PIN)3)
Total injected current (sum of all I/O
and control pins)
VDD=5V
IL
Input leakage current
VSSVINVDD
IS
Static current consumption 4)
Floating input mode
RPU Weak pull-up equivalent resistor 5) VIN=VSS
VDD=5V
CIO
tf(IO)out
tr(IO)out
tw(IT)in
I/O pin capacitance
Output high to low level fall time 1)
Output low to high level rise time 1)
External interrupt pulse time 6)
CL=50pF
Between 10% and 90%
Min
Typ
0.7xVDD
1
2.8
400
80
120
5
25
25
1
Max
0.3xVDD
0.8
+5/-2
+5/-0
± 25
±11
200
250
Unit
V
V
V
mV
mA
µA
k
pF
ns
tCPU
Notes:
1. Data based on characterization results, not tested in production.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
3. IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum cannot be
respected, the injection current must be limited externally to the IINJ(PIN) value. A positive injection is induced by VIN>VDD
while a negative injection is induced by VIN<VSS. For true open-drain pads, there is no positive injection current, and the
corresponding VIN maximum must always be respected
Refer to section 11.2.2 on page 244 for more details.
4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for
example or an external pull-up or pull-down resistor (see Figure 135). Data based on design simulation and/or technology
characteristics, not tested in production.
5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de-
scribed in Figure 136). This data is based on characterization results, tested in production at VDD max.
6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external
interrupt source.
260/294

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