LH28F800BGHE-TL12 查看數據表（PDF） - Sharp Electronics
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LH28F800BGHE-TL12 Datasheet PDF : 43 Pages
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LH28F800BG-L/BGH-L (FOR TSOP, CSP)
6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS (NOTE 1)
• VCC = 2.7 to 3.6 V, TA = 0 to +70˚C or –40 to +85˚C
VERSIONS
LH28F800BG-L85 LH28F800BG-L12
LH28F800BGH-L85 LH28F800BGH-L12 UNIT
SYMBOL
PARAMETER
NOTE MIN.
MAX.
MIN.
MAX.
tAVAV Write Cycle Time
120
150
ns
tPHWL RP# High Recovery to WE# Going Low
2
1
1
µs
tELWL CE# Setup to WE# Going Low
10
10
ns
tWLWH WE# Pulse Width
50
50
ns
tPHHWH RP# VHH Setup to WE# Going High
2
100
100
ns
tSHWH WP# VIH Setup to WE# Going High
2
100
100
ns
tVPWH VPP Setup to WE# Going High
2
100
100
ns
tAVWH Address Setup to WE# Going High
3
50
50
ns
tDVWH Data Setup to WE# Going High
3
50
50
ns
tWHDX Data Hold from WE# High
5
5
ns
tWHAX Address Hold from WE# High
5
5
ns
tWHEH CE# Hold from WE# High
10
10
ns
tWHWL WE# Pulse Width High
30
30
ns
tWHRL WE# High to RY/BY# Going Low
100
100 ns
tWHGL Write Recovery before Read
0
0
ns
tQVVL VPP Hold from Valid SRD, RY/BY# High
2, 4
0
0
ns
tQVPH RP# VHH Hold from Valid SRD, RY/BY# High 2, 4
0
0
ns
tQVSL WP# VIH Hold from Valid SRD, RY/BY# High 2, 4
0
0
ns
NOTES :
1. Read timing characteristics during block erase and word
write operations are the same as during read-only
operations. Refer to Section 6.2.4 "AC CHARAC-
TERISTICS" for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid AIN and DIN for block erase or
word write.
4. VPP should be held at VPPH1/2/3 (and if necessary RP#
should be held at VHH) until determination of block erase
or word write success (SR.1/3/4/5 = 0 : on Boot Blocks,
SR.3/4/5 = 0 : on Parameter Blocks and Main Blocks).
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