Номер в каталоге
STP100N6F7
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PDF
page
13 Pages
File Size
491.1 kB
производитель
STMicroelectronics
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STP100N6F7 Даташит - STMicroelectronics
STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Among the lowest RDS(on) on the market
• Excellent figure of merit (FoM)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
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производитель
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