C1567 Даташит - New Jersey Semiconductor

DESCRIPTION
• Collector-Emitter Breakdown Voltage •-. : V(BR)CEO= 100V(Min)
• Good Linearity of hFE
• Complement to Type 2SA794

APPLICATIONS
• Designed for low-frequency high power driver.
• Optimum for the driver stage of low-frequency and 40W to 100W output amplifier.