2N6667 Даташит - Shenzhen SPTECH Microelectronics Co., Ltd.

DESCRIPTION
• High DC Current Gain- : hFE = 1000(Min)@ IC= -5A
• Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)
• Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A
• Complement to Type 2N6387

APPLICATIONS
• Designed for general purpose amplifier and low speed switching applications.