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STW8NC80Z
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STMicroelectronics
STW8NC80Z 데이터시트 - STMicroelectronics
STMicroelectronics
DESCRIPTION
The third generatio- of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes betwee- gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed by a large variety of single-switch applications.
- TYPICAL RDS(on) = 1.3 Ω
- EXTREMELY HIGH dv/dt CAPABILITY GATE TO-SOURCE ZENER DIODES
- 100% AVALANCHE TESTED
- VERY LOW INTRINSIC CAPACITANCES
- GATE CHARGE MINIMIZED
APPLICATIONS
- SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
- WELDING EQUIPMENT
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