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STU9HN65M2
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STU9HN65M2 데이터시트 - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
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