STS12NH3LL(2007) 데이터시트 - STMicroelectronics

Description
This series is based on the latest generation of ST’s proprietary “STripFET™” technology. An innovative layout enables the device to also exhibit extremely low gate charge for the most demanding requirements as high-side switch in high-frequency DC-DC converters. It’s therefore ideal for high-density converters in telecom and computer applications.

FEATUREs
■ Optimal RDS(on) x Qg trade-off @ 4.5 V
■ Switching losses reduced
■ Low input capacitance
■ Low threshold device

APPLICATION
■ Switching applications