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STP80N06-10
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STP80N06-10 데이터시트 - STMicroelectronics
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
■ TYPICAL RDS(on)= 8.5 mΩ
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCE TESTED
■ HIGH CURRENT CAPABILITY
■ 175°C OPERATING TEMPERATURE
■ HIGH dV/dt RUGGEDNESS
■ APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ PWM MOTOR CONTROL
■ DC-DC & DC-AC CONVERTER
■ SYNCROUNOUS RECTIFICATION
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N - CHANNEL ENHANCEMENT MODE ?ULTRA HIGH DENSITY? POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE ?ULTRA HIGH DENSITY? POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE ?ULTRA HIGH DENSITY? POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
STMicroelectronics
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
STMicroelectronics
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