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STP3NC90Z
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STMicroelectronics
STP3NC90Z 데이터시트 - STMicroelectronics
STMicroelectronics
DESCRIPTION
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
■ TYPICAL RDS(on) = 3.2Ω
■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
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