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STP3N150
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STMicroelectronics
STP3N150(2010) 데이터시트 - STMicroelectronics
STMicroelectronics
Description
Using the well consolidated high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
FEATUREs
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF plastic package
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
APPLICATION
Switching applications
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