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STP120N4F6
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STP120N4F6 데이터시트 - STMicroelectronics
STMicroelectronics
Description
This device is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
■ Standard threshold drive
■ 100% avalanche tested
APPLICATION
■ Switching applications
■ Automotive
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