STN878(2007) 데이터시트 - STMicroelectronics

Description
The device is manufactured in low voltage PNP planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

FEATUREs
■ Very low Collector to Emitter saturation voltage
■ D.C. Current gain, hFE >100
■ 5A continuous collector current
■ SOT-223 plastic package for surface mounting circuits
■ Available in tape & reel packing

APPLICATIONs
■ Power management in portable equipment
■ Voltage regulation in bias supply circuits
■ Switching regulator in battery charger applications
■ Heavy load driver