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STL23NS3LLH7
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STL23NS3LLH7 데이터시트 - STMicroelectronics
STMicroelectronics
Description
This N-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations.
FEATUREs
• Very low on-resistance
• Very low Qg
• High avalanche ruggedness
• Embedded Schottky diode
APPLICATIONs
• Switching applications
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N-channel 30 V, 0.0016 ? typ., 160 A STripFET? H7 Power MOSFET plus monolithic Schottky in a PowerFLAT? 5x6
STMicroelectronics
N-channel 30 V, 0.0033 ? typ., 27 A STripFET? H7 Power MOSFET plus monolithic Schottky in a PowerFLAT? 5x6
STMicroelectronics
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