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STI28N60M2
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STI28N60M2 데이터시트 - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• LCC converters, resonant converters
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