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STH260N6F6-2
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STH260N6F6-2 데이터시트 - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
APPLICATIONs
■ Switching applications
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