STGD18N40LZ-1(2014) 데이터시트 - STMicroelectronics

Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system.

FEATUREs
• Designed for automotive applications and AEC-Q101 qualified
• 180 mJ of avalanche energy @ TC = 150 °C,
L = 3 mH
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor

APPLICATION
• Pencil coil electronic ignition driver