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STB78NF55-08
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STB78NF55-08 데이터시트 - STMicroelectronics
STMicroelectronics
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
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N-channel 500 V, 0.28 ? typ., 12 A MDmesh? II Power MOSFETs in TO-220FP, IPAK and TO-220 packages ( Rev : 2014 )
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N-channel 100 V, 9.0 m? typ., 110 A STripFET? II Power MOSFETs in DPAK, TO-220 and TO-247 packages ( Rev : 2017 )
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