STB55NF03L 데이터시트 - STMicroelectronics

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor shows extremely high packing density for low on
resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark able manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.01 Ω
■ OPTIMIZED FOR HIGH SWITCHING OPERATIONS
■ LOW GATE CHARGE
■ LOGIC LEVEL GATE DRIVE

APPLICATIONS
■ LOW VOLTAGE DC-DC CONVERTERS
■ HIGH CURRENT, HIGH SWITCHING SPEED
■ HIGH EFFICIENCY SWITCHING CIRCUITS