NAND01GW4B2B 데이터시트 - STMicroelectronics

Description
   ST NAND01G-B2B and NAND02G-B2C Flash 2112 Byte/ 1056 Word Page is a family of non-volatile Flash memories that uses NAND cell technology. The devices range from 1 Gbit to 2 Gbits and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 2112 Bytes (2048 + 64 spare) or 1056 Words (1024 + 32 spare) depending on whether the device has a x8 or x16 bus width.

FEATUREs
◾ High Density NAND Flash memories
   – Up to 2 Gbit memory array
   – Cost effective solutions for mass
      storage applications
◾ NAND interface
   – x8 or x16 bus width
   – Multiplexed Address/ Data
   – Pinout compatibility for all densities
◾ Supply voltage: 1.8V/3.0V
◾ Page size
   – x8 device: (2048 + 64 spare) Bytes
   – x16 device: (1024 + 32 spare) Words
◾ Block size
   – x8 device: (128K + 4K spare) Bytes
   – x16 device: (64K + 2K spare) Words
◾ Page Read/Program
   – Random access: 25µs (max)
   – Sequential access: 30ns (min)
   – Page program time: 200µs (typ)
◾ Copy Back Program mode
◾ Cache Program and Cache Read modes
◾ Fast Block Erase: 2ms (typ)
◾ Status Register
◾ Electronic Signature
◾ Chip Enable ‘don’t care’
◾ Serial Number option
◾ Data protection
   – Hardware Block Locking
   – Hardware Program/Erase locked during
      Power transitions
◾ Data integrity
   – 100,000 Program/Erase cycles
   – 10 years Data Retention
◾ ECOPACK® packages
◾ Development tools
   – Error Correction Code models
   – Bad Blocks Management and Wear
      Leveling algorithms
   – Hardware simulation models