M29DW641F70N6F 데이터시트 - Numonyx -> Micron

Summary description
   The M29DW641F is a 64 Mbit (4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory default to its Read mode.

FEATUREs
◾ Supply voltage
   – VCC = 2.7V to 3.6V for Program, Erase and
      Read
   – VPP/WP=12V for Fast Program (optional)
◾ Asynchronous Page Read mode
   – Page Width 8 Words
   – Page Access 25, 30ns
   – Random Access: 60, 70ns
◾ Programming Time
   – 10µs per Word typical
   – 4 Words at-a-time Program
◾ Memory blocks
   – Quadruple Bank Memory Array:
      8Mbit+24Mbit+24Mbit+8Mbit
   – Parameter Blocks (at Top and Bottom)
◾ Dual Operations
   – While Program or Erase in a group of
      banks (from 1 to 3), Read in any of the
      other banks
◾ Program/Erase Suspend and Resume modes
   – Read from any Block during Program
      Suspend
   – Read and Program another Block during
      Erase Suspend
◾ Unlock Bypass Program command
   – Faster Production/Batch Programming
◾ Common Flash Interface
   – 64 bit Security Code
◾ 100,000 Program/Erase cycles per block
◾ Low power consumption
   – Standby and Automatic Standby
◾ Extended Memory Block
   – Extra block used as security block or to
      store additional information
◾ Hardware Block Protection
   – VPP/WP Pin for fast program and write
      protect of the four outermost parameter
      blocks
◾ Software Block Protection
   – Standard Protection
   – Password Protection
◾ Electronic Signature
   – Manufacturer code: 0020h
   – Device code: 227Eh + 2203h + 2200h
◾ ECOPACK® packages