CEF02N6 데이터시트 - Unspecified
제조사

Unspecified
[CET]
FEATURES
● 600V , 1.5A , RDS(ON)=5Ω @VGS=10V.
● Super high dense cell design for extremely low RDS(ON).
● High power and current handling capability.
● TO-220F full-pak for through hole
N-channel enhancement mode field-effect transistor
NXP Semiconductors.
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
NXP Semiconductors.
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics
N-channel enhancement mode field-effect transistor
Philips Electronics