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2STBN15D100T4 데이터시트 - STMicroelectronics

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2STBN15D100T4

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Low voltage NPN power Darlington transistor

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7 Pages

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Description
The device is manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

FEATUREs
■ Good hFE linearity
■ High fT frequency
■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode

APPLICATION
■ Linear and switching industrial equipment

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