2STA1943 데이터시트 - STMicroelectronics
제조사

STMicroelectronics
Description
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
FEATUREs
■ High breakdown voltage VCEO > -230V
■ Complementary to 2STC5200
■ Fast-switching speed
■ Typical fT = 30 MHz
APPLICATION
■ Audio power amplifier
High power PNP epitaxial planar bipolar transistor ( Rev : 2007 )
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor ( Rev : 2007 )
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor ( Rev : 2008_11 )
STMicroelectronics