2N6039(2009) 데이터시트 - STMicroelectronics
제조사
STMicroelectronics
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
FEATUREs
■ Good hFE linearity
■ High fT frequency
■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
APPLICATIONs
■ Linear and switching industrial equipment
Complementary power Darlington transistors
STMicroelectronics
Complementary Darlington Power Transistors ( Rev : 2004 )
ON Semiconductor
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
Central Semiconductor
Complementary power Darlington transistors
STMicroelectronics
Complementary power Darlington transistors
STMicroelectronics
Complementary Darlington Power Transistors
ON Semiconductor
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
STMicroelectronics
Complementary power Darlington transistors
STMicroelectronics
Complementary power Darlington transistors
STMicroelectronics
Complementary power Darlington transistors ( Rev : 2009 )
STMicroelectronics
