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STM32F103VB 데이터 시트보기 (PDF) - STMicroelectronics

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STM32F103VB Datasheet PDF : 67 Pages
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STM32F103xx
Electrical characteristics
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with SAE J
1752/3 standard which specifies the test board and the pin loading.
Table 26. EMI characteristics
Symbol Parameter
Conditions
Monitored
Frequency Band
Max vs. [fHSE/fHCLK]
8/48 MHz 8/72 MHz
Unit
0.1 to 30 MHz
12
SEMI
Peak level
VDD = 3.3 V, TA = 2 5 °C,
LQFP100 package
compliant with SAE J
30 to 130 MHz
130 MHz to 1GHz
22
23
1752/3
SAE EMI Level
4
12
19 dBµV
29
4
-
41/67

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