NAND04GA3C2N6E 데이터 시트보기 (PDF) - STMicroelectronics

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NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

NAND04GA3C2A, NAND04GW3C2A

12 DC and AC parameters

Figure 17. Read Status Register AC Waveform

tCLLRL

CL

tCLHWH

E

tWHCLL

tWHEH

tELWH

tWLWH

W

tELQV

tWHRL

R

tDVWH

(Data Setup time)

tDZRL

tWHDX

(Data Hold time)

tRLQV

I/O

70h

tEHQZ

tRHQZ

Status Register

Output

Figure 18. Read Electronic Signature AC Waveform

ai12708

CL

E

W

AL

tALLRL1

R

tRLQV

(Read ES Access time)

I/O

90h

00h

Byte1 Byte2 Byte3

Byte4

Read Electronic 1st Cycle

Signature

Address

Command

Man. Device

code code

see Note.1

ai08667b

1. Refer to Table 10 for the values of the Manufacturer and Device Codes, and to Table 11 and Table 12 for the information

contained in Byte3 and Byte 4.

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