NAND04GA3C2N6E 데이터 시트보기 (PDF) - STMicroelectronics

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NAND04GA3C2N6E

4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory

STMicroelectronics 

NAND04GA3C2A, NAND04GW3C2A

10 Program and erase times and endurance cycles

10 Program and erase times and endurance cycles

The Program and Erase times and the number of Program/ Erase cycles per block are

shown in Table 14

Table 14. Program, Erase Times and Program Erase Endurance Cycles

Parameters

NAND04GA3C2A, NAND04GW3C2A

Min

Typ

Max

Page Program Time

Block Erase Time

Program/Erase Cycles (per block)

Data Retention

800

1.5

10,000

10

2000

3

Unit

µs

ms

cycles

years

33/51

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