TSM2NB60(V_B11) データシート - TSC Corporation

General Description
   The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

FEATUREs
● Low RDS(ON) 3.9Ω (Typ.)
● Low gate charge typical @ 9.5nC (Typ.)
● Low Crss typical @ 5pF (Typ.)
● 100% Avalanche Tested