STTH4R02BY データシート - STMicroelectronics

Description
This device uses STs new 200 V planar Pt doping technology, and it is especially suited for switching mode base drive and transistor circuits.
Packaged in SMB, SMC and DPAK, it is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection in automotive applications.

FEATUREs
• Very low conduction losses
• Negligible switching losses
• Low forward and reverse recovery times
• High junction temperature
• PPAP capable
• AEC-Q101 qualified