STPSC10H065DLF データシート - STMicroelectronics

Description
This 10 A, 650 V, SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Qualified in low profile package, the STPSC10H065DLF in PowerFLAT 8x8 HV, enables low drop forward voltage associated to high surge capabilities in low space environment such as telecom and network, industrial or renewable energy domains.

FEATUREs
• Less than 1 mm height package
• High creepage package
• No or negligible reverse recovery
• Temperature independent switching behavior
• High forward surge capability
• Very low drop forward voltage
• Power efficient product
• ECOPACK2 compliant component

APPLICATIONs
• Boost PFC
• Bootstrap diode
• LLC clamping function
• High frequency inverter applications