部品番号
STP18N65M2
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STP18N65M2 データシート - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• LLC converters, resonant converters
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