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STL7N80K5 データシート - STMicroelectronics

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部品番号
STL7N80K5

Other PDF
  2013  

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page
17 Pages

File Size
757.7 kB

メーカー
ST-Microelectronics
STMicroelectronics 

Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.


FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications

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N-channel 800 V, 2.75 ? typ., 2 A MDmesh K5 Power MOSFET in a TO-220 package
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N-channel 800 V, 0.23 ? typ., 16 A MDmesh? K5 Power MOSFET in a TO-220FP package
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N-channel 800 V, 1.50 ? typ., 4 A MDmesh? K5 Power MOSFET in a TO-220FP package
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N-channel 800 V, 1.50 ? typ., 4 A MDmesh? K5 Power MOSFET in a TO-220 package
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N-channel 800 V, 0.55 ? typ., 8 A MDmesh? K5 Power MOSFET in a TO-220FP package
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N-channel 800 V, 2.75 ? typ., 2 A MDmesh K5 Power MOSFET in an IPAK package ( Rev : 2023 )
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