STL28NF3LL データシート - STMicroelectronics
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STMicroelectronics
DESCRIPTION
This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low on-resistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance.
■ TYPICAL RDS(on) = 0.0055Ω
■ IMPROVED DIE-TO-FOOTPRINT RATIO
■ VERY LOW PROFILE PACKAGE
APPLICATIONS
■ DC-DC CONVERTERS
30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET ( Rev : 2014 )
Unisonic Technologies
Single N-channel Trench MOSFET 30V, 28A, 4.5m?
MagnaChip Semiconductor
Single N-channel Trench MOSFET 30V, 28A, 4.9m?
MagnaChip Semiconductor
30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET ( Rev : 2010 )
Unisonic Technologies
N-CHANNEL 30V - 0.008? - 30A PowerFLAT? LOW GATE CHARGE STripFET? MOSFET
STMicroelectronics
N-CHANNEL 30V - 0.0056? - 90A D2PAK LOW GATE CHARGE STripFET? POWER MOSFET
STMicroelectronics
Low gate charge
JILIN SINO-MICROELECTRONICS CO., LTD.
Low gate charge
JILIN SINO-MICROELECTRONICS CO., LTD.
Low gate charge
JILIN SINO-MICROELECTRONICS CO., LTD.
Low gate charge
JILIN SINO-MICROELECTRONICS CO., LTD.