部品番号
STD130N6F7
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STD130N6F7 データシート - STMicroelectronics
STMicroelectronics
Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
FEATUREs
• Among the lowest RDS(on) on the market
• Excellent FoM (figure of merit)
• Low Crss/Ciss ratio for EMI immunity
• High avalanche ruggedness
APPLICATIONs
• Switching applications
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