部品番号
STB42N60M2-EP
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STB42N60M2-EP(2015) データシート - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
• Tailored for very high frequency converters
(f > 150 kHz)
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