START499D データシート - STMicroelectronics

Description
The START499D provide the market with a Si state-of-art RF process. Manufactured with ST 3rd generation bipolar process, it offers the highest power, gain and efficiency in SOT-89 for given breakdown voltage (BVCEo). START499D is suitable for a wide range of application up to 1 GHz.

FEATUREs
■ High efficiency
■ Common emitter configuration
■ Broadband performances POUT = 29 dBm with 14 dB gain @ 900 MHz
■ Plastic package
■ Linear and non linear operation
■ Supplied in tape and reel
■ In compliance with the 2002/95/EC european directive