SBA-4089Z(V2) データシート - RF Micro Devices

Product Description
RFMD’s SBA4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.

FEATUREs
■ IP3=33.5dBm at 1950MHz
■ POUT=13.3dBm at -45dBc ACP IS-95 1950MHz
■ Robust 1000V ESD, Class 1C
■ Operates From Single Supply
■ Patented Thermal Design

APPLICATIONs
■ PA Driver Amplifier
■ Cellular, PCS, GSM, UMTS
■ IF Amplifier
■ Wireless Data, Satellite Terminals