PHP101NQ03LT データシート - Nexperia B.V. All rights reserved

General description
   Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

FEATUREs and benefits
◾ Low conduction losses due to low
   on-state resistance
◾ Simple gate drive required due to low
   gate charge
◾ Suitable for logic level gate drive
   sources

APPLICATIONs
◾ DC-to-DC convertors