M45PE80-VMN6TP データシート - Micron Technology

Micron Serial NOR Flash Memory
3V, 8MB Page Erasable with Byte Alterability

FEATUREs
• SPI bus-compatible serial interface
• 75 MHz clock frequency (MAX)
• 2.7–3.6V single supply voltage
• 8Mb of page-erasable Flash memory
• Page size: 256 bytes
   – Page write: 11ms (TYP)
   – Page program: 0.8ms (TYP)
   – Page erase: 10ms (TYP)
• Sector erase: 64KB
• Hardware write protection of the bottom memory
   area 64KB
• Electronic signature
   – JEDEC-standard, 2-byte signature (4014h)
• Deep power-down mode: 1µA (TYP)
• WRITE cycles per sector: >100,000
• Years of data retention: >20
• Packages (RoHS-compliant)
   – VFQFPN8 (MP) 6mm x 5mm
   – SO8W (MW) 208 mil
   – SO8N (MN) 150 mil