LS5909 データシート - Linear Integrated System
メーカー
Linear Integrated System
FEATURES
LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max.
ULTRA LOW LEAKAGE IG = 150fA TYP.
LOW PINCHOFF VP= 2V TYP.
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Technology
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER ( Rev : 2014 )
Linear Technology
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER
Linear Technology
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Linear Technology
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
Micross Components
LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Linear Integrated System
