2STR1215(2006) データシート - STMicroelectronics

Description
The 2STR1215 is a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2STR2215.

General features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Miniature SOT-23 plastic package for surface
   mounting circuits
■ In compliance with the 2002/93/EC European
   Directive

APPLICATIONs
■ LED
■ Battery charger
■ Voltage and relay driver
■ Voltage regulation