2STL1360 データシート - STMicroelectronics

Description
The devices are NPN transistors manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

FEATUREs
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed

APPLICATIONs
■ Emergency lighting
■ LED
■ Voltage regulation
■ Relay drive