2SC3669 データシート - Unisonic Technologies
メーカー
Unisonic Technologies
POWER AMPLIFIER APPLICATIONS
POWER SWITCHING APPLICATIONS
FEATURES
* Low saturation voltage
VCE(SAT)=0.5V (Max.)
* High speed switching time: TSTG=1.0μs (Typ.)
Silicon NPN Epitaxial Transistor
KEXIN Industrial
Silicon NPN Epitaxial Transistor
Renesas Electronics
Silicon NPN Epitaxial Transistor
Renesas Electronics
Silicon NPN Epitaxial Transistor
Galaxy Semi-Conductor
SILICON EPITAXIAL NPN TRANSISTOR ( Rev : 1996 )
Semelab - > TT Electronics plc
SILICON EPITAXIAL NPN TRANSISTOR
Semelab - > TT Electronics plc
NPN Silicon epitaxial Transistor
Shenzhen Luguang Electronic Technology Co., Ltd
NPN Silicon Epitaxial Transistor
KEXIN Industrial
NPN Silicon Epitaxial Transistor
Semtech Electronics LTD.
NPN Silicon Epitaxial Transistor
Unspecified
