2N6036(2009) データシート - STMicroelectronics
メーカー
STMicroelectronics
Description
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.
FEATUREs
■ Good hFE linearity
■ High fT frequency
■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
APPLICATIONs
■ Linear and switching industrial equipment
Complementary power Darlington transistors
STMicroelectronics
Complementary Darlington Power Transistors ( Rev : 2004 )
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Complementary Darlington Power Transistors
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COMPLEMENTARY POWER DARLINGTON TRANSISTORS
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Complementary power Darlington transistors
STMicroelectronics
Complementary power Darlington transistors
STMicroelectronics
Complementary power Darlington transistors ( Rev : 2009 )
STMicroelectronics
